Epitaxial GaInP/GaAs/Si Triple?Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al <sub> <i>x</i> </sub> Ga <sub> 1? <i>x</i> </sub> As <sub> <i>y</i> </sub> P <sub> 1? <i>y</i> </sub> Step?Graded Buffer Structures

نویسندگان

چکیده

III–V/Si multi-junction solar cells are potential successors to the silicon single-junction cell due their efficiency of up 40% in radiative limit.[1] Herein, latest results epitaxially integrated GaInP/GaAs/Si triple-junction presented. To reduce parasitic absorption losses, which have limited current density Si bottom previous devices, transparent AlxGa1–xAsyP1–y step-graded metamorphic buffers investigated. Compared with GaAsyP1–y buffers, transmittance is enhanced significantly, while no significant impact on threading dislocation observed. Implemented into a new cell, an increase short-circuit from 10.0 12.2 mA cm?2 achieved, leading record conversion 25.9% under AM1.5g conditions.

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ژورنال

عنوان ژورنال: Solar RRL

سال: 2021

ISSN: ['2367-198X']

DOI: https://doi.org/10.1002/solr.202000763